François Jomard

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Diamond is a unique semiconductor for the fabrication of electronic and opto-electronic devices because of its exceptional physical and chemical properties. However, a serious obstacle to the realization of diamond-based devices is the lack of n-type diamond with satisfactory electrical properties. Here we show that high-conductivity n-type diamond can be(More)
This paper presents a review of the properties induced by the presence of hydrogen in monocrystalline boron-doped diamond (BDD) and proposes a comparison with results obtained on polycrystalline materials. Hydrogen diffusion, luminescence and electrical properties show the passivation of boron acceptors in diamond by the formation of (B,H) complexes, in(More)
Boron delta-doping of diamond has appeared as a promising viable approach for the fabrication of high performance RF power transistors taking advantage of diamond properties. Here structures based on p-/p+/p- multilayers were synthesised on (100) HPHT Ib substrates using MPCVD. An original gas injector system was developed enabling to significantly improve(More)
by performing electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and the decay kinetics on photoexcitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. Large enhancements in the magnitude of the photoconductance and charge carrier lifetime are(More)
Lead chalcogenide (PbS, PbSe, and PbTe) nanocrystals were synthesized by sequential implantation of Pb and one of the chalcogen species into pure silica. The implantation energy and fluence were chosen so that the implantation profiles practically overlap at a depth approximately 150 nm with a maximum concentration of about 0.3 atom %. Annealing for 1-8 h(More)
The phenomenon of resistive switching (RS), which was initially linked to non-volatile resistive memory applications, has recently also been associated with the concept of memristors, whose adjustable multilevel resistance characteristics open up unforeseen perspectives in cognitive computing. Herein, we demonstrate that the resistance states of Li(x)CoO2(More)
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