François Danneville

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This paper proposes issues in highly accurate high frequency noise simulation for deep submicron MOSFETs. Unlike classical RF design, in which a given device with fixed characteristics is used, CMOS RF design permits selection of user specified device geometries as well as matching elements and bias conditions. Therefore, an exhaustive intrinsic noise(More)
We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies fT/f max of 100/125 GHz together with minimum noise figure NF(min) = 0.5 dB and associated gain G(ass) = 12 dB at 12 GHz have been obtained at drain bias(More)
SUMMARY This paper presents a review of the techniques and models that can be used for the noise performance calculation of active devices under linear and nonlinear operations. In a first part, the modeling techniques and the noise models of FETs, HEMTs, BJTs and HBTs are described. In the second part, a generalization of the impedance field method for the(More)
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