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A novel 1.55-/spl mu/m surface-emitting laser structure based on a tunnel junction for current injection and GaAs-AlAs top mirror directly grown on InP cavity in a 2 in. compatible process allows cw operation at room temperature.
A new wavelength-division multiplexed (WDM) optimized design of integrated electroabsorption modulator distributed feedback lasers provides a great tolerance on operating conditions and laser wavelength: 2.5 gbit/s transmission over 1000 km is performed for /spl Delta/I/sub laser/=70 mA, /spl Delta/T/sub chip/=20/spl deg/C, and /spl Delta//spl lambda//sub… (More)