Filippo Giannazzo

Learn More
A nanoscale investigation on the capacitive behavior of graphene deposited on a SiO2/n(+) Si substrate (with SiO2 thickness of 300 or 100 nm) was carried out by scanning capacitance spectroscopy (SCS). A bias V(g) composed by an AC signal and a slow DC voltage ramp was applied to the macroscopic n(+) Si backgate of the graphene/SiO(2)/Si capacitor, while a(More)
A process to immobilize the enzyme glucose oxidase on SiO2 surfaces for the realization of integrated microbiosensors was developed. The sample characterization was performed by monitoring, step by step, oxide activation, silanization, linker molecule (glutaraldehyde) deposition, and enzyme immobilization by means of XPS, AFM, and contact angle(More)
Recently, giant carrier mobility μ (>10(5) cm(2) V(-1) s(-1)) and micrometer electron mean free path (l) have been measured in suspended graphene or in graphene encapsulated between inert and ultraflat BN layers. Much lower μ values (10000-20000 cm(2) V(-1) s(-1)) are typically reported in graphene on common substrates (SiO(2), SiC) used for device(More)
Dynamic scaling behavior has been observed during the room-temperature growth of sputtered Au films on SiO2using the atomic force microscopy technique. By the analyses of the dependence of the roughness, σ, of the surface roughness power,P(f), and of the correlation length,ξ, on the film thickness,h, the roughness exponent,α = 0.9 ± 0.1, the growth(More)
In this work, we present a nanometer resolution structural characterization of epitaxial graphene (EG) layers grown on 4H-SiC (0001) 8° off-axis, by annealing in inert gas ambient (Ar) in a wide temperature range (Tgr from 1600 to 2000°C). For all the considered growth temperatures, few layers of graphene (FLG) conformally covering the 100 to 200-nm wide(More)
Atomic-resolution structural and spectroscopic characterization techniques (scanning transmission electron microscopy and electron energy loss spectroscopy) are combined with nanoscale electrical measurements (conductive atomic force microscopy) to study at the atomic scale the properties of graphene grown epitaxially through the controlled graphitization(More)
Vertical heterostructures combining two or more graphene (Gr) layers separated by ultra-thin insulating or semiconductor barriers represent very promising systems for next generation electronics devices, due to the combination of high speed operation with wide-range current modulation by a gate bias. They are based on the specific mechanisms of current(More)
Utilizing Langmuir-Blodgett deposition and scanning probe microscopy, we have investigated the extent to which cations alter the self-assembly processes of hybrid polyoxometalates (POMs) on surfaces. The well-defined 2D hexagonal nanostructures obtained were extensively characterized and their properties were studied, and this has revealed fascinating(More)
We report on the equilibrium shape and atomic structure of thermally-processed Au nanocrystals (NCs) as determined by high resolution transmission electron microscopy (TEM). The NCs were either deposited on SiO2surface or embedded in SiO2layer. Quantitative data on the NCs surface free energy were obtained via the inverse Wulff construction. Nanocrystals(More)
In spite of more than two-decades of studies of molecular self-assembly, the achievement of low cost, easy-to-implement and multi-parameter bottom-up approaches to address the supramolecular morphology in three-dimensional (3D) systems is still missing. In the particular case of molecular thin films, the 3D nanoscale morphology and function are crucial for(More)