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In this work a comparative analysis between different trench-based power MOSFETs is performed to optimize the efficiency and the robustness of 48V-input synchronous buck converters. Hence, gate-trench (GT), gate-drift-trench (GDT) and split-gate (SG) trench structures are investigated by measurements and mixed-mode simulations to determine their suitability(More)
Developing reliable high voltage transistors requires consistent manufacturing of critical architectural parameters within the device over time and with various design configurations. Structural parameters that directly affect reliability are especially crucial to delivering robust parts to the market place. In this paper it is shown that the nwell and(More)
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