Fernando de Souza Campos

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A novel multisampling time-domain architecture for CMOS imagers with synchronous readout and wide dynamic range is proposed. The architecture was implemented in a prototype of imager with 32x32 pixel array fabricated in AMS CMOS 0.35µm and was characterized for sensitivity and color response. The pixel is composed of an n+/psub photodiode, a comparator(More)
Power transformers are crucial in an electric power system. Failures in transformers can affect the quality and cause interruptions in the power supply. Partial discharges are a phenomenon that can cause failures in the transformers if not properly monitored. Typically, the monitoring requires high-cost corrective maintenance or even interruptions of the(More)
This paper presents a radiation hardened Active Pixel Sensor implemented in a standard 0.35μm CMOS process. The integrated circuit is composed of a 64x64 pixel matrix with a 25μm pixel pitch and has four different pixel architectures. There are also test structures to permit the characterization of the MOS transistors. The radiation hardening of(More)
Image sensors in standard CMOS technology are increasing used for consumer, industrial and scientific applications due to their low cost, high level of integration and low power consumption. Further, image sensors in mainstream complementary metal-oxide-semiconductor (CMOS) technology are preferred because they are the lowest cost and easiest/fastest option(More)
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