Fernando de Souza Campos

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A novel multisampling time-domain architecture for CMOS imagers with synchronous readout and wide dynamic range is proposed. The architecture was implemented in a prototype of imager with 32x32 pixel array fabricated in AMS CMOS 0.35µm and was characterized for sensitivity and color response. The pixel is composed of an n+/psub photodiode, a comparator(More)
This paper presents a radiation hardened Active Pixel Sensor implemented in a standard 0.35μm CMOS process. The integrated circuit is composed of a 64x64 pixel matrix with a 25μm pixel pitch and has four different pixel architectures. There are also test structures to permit the characterization of the MOS transistors. The radiation hardening of(More)
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