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In segregation effects during InAs growth on GaAs͑001͒ and critical thickness for InAs self-assembled quantum dots are studied using a real time, in situ technique capable of measuring accumulated stress during growth. Due to a large (ϳ50%) surface In segregation of floating In, self-assembled dot formation takes place when less than one monolayer of InAs(More)
  • Dordrecht, London D Boston, Social Behavioral, E Sciences, S Briggs, H Kleinpoppen +86 others
  • 2010
A series presenting the results of activities sponsored by the NA TO Science Committee, which aims at the dissemination of advanced scientific and technoiogicai knowiedge, with a view to strengthening links between scientific communities. Recent Volumes in this Series Volume 181—Fundamental Processes of Atomic Dynamics edited by J. No part of this book may(More)
In segregation during InAs growth on GaAs(001) is studied using a real time, in situ technique capable of measuring sample accumulated stress. A 50% surface In segregation of liquid-like stress free matter is deduced. A picture of growth below critical thickness for quantum dot formation is discussed on the basis of the equilibrium between pseudomorphic(More)
The most fundamental mass transport process in solids is self-diffusion. The motion of host-lattice ('self-') atoms in solids is mediated by point defects such as vacancies or interstitial atoms, whose formation and migration enthalpies determine the kinetics of this thermally activated process. Self-diffusion studies also contribute to the understanding of(More)
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