Ferenc Riesz

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Hydrogenated multilayers (MLs) of a-Si/a-Ge have been analysed to establish the reasons of H release during annealing that has been seen to bring about structural modifications even up to well-detectable surface degradation. Analyses carried out on single layers of a-Si and a-Ge show that H is released from its bond to the host lattice atom and that it(More)
The defect structure in relaxed (100) InGaAs/GaAs heteroepitaxial systems grown by molecular beam epitaxy is studied by selective electrochemical (anodic) etching. By incremental layer removal , we map the depth profile of the dislocation density. The density of dislocations is inversely proportional to the layer thickness and increases with misfit. The(More)
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