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The conventional mesa isolation process in AlGaAs/InGaAs doped-channel FETs (DCFETs) results in the gate contacting the exposed highly n-type doped channel at the mesa sidewall, forming a parasitic gate leakage path. In this work, we suppress the gate leakage from the mesa-sidewall to increase the gate-to-drain breakdown voltage (BV/sub gd/) and the(More)
Termination region plays an important role in high voltage power VDMOSFETs. Termination structure such as floating-field-limiting-rings and field plates are the common structures used in a termination region because they can be fabricated without additional masks. However, sometimes we use both of them, sometimes only the floating-field-limiting-ring. The(More)