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—This study aims to understand the potential of bulk FinFET technology from the perspective of sub-and near-threshold logic circuits down to 100-mV bias voltage. Measurements are performed on bulk FinFETs with a channel length of 60 nm, a fin height of 33 nm, and a fin width of only 14 nm and with a high-k/metal-gate stack having an equivalent thickness in(More)
—The impact of the interfacial layer thickness on the low-frequency (LF) noise (1/f noise) behavior of n-and p-channel MOSFETs with high-κ gate dielectrics and metal gates is investigated. Decreasing the interfacial layer thickness from 0.8 to 0.4 nm affects the 1/f noise in two ways. 1) The mobility fluctuations mechanism becomes the main source of 1/f(More)
—Ultralow noise measurements often require the application of signal processing and correction techniques to go beyond the noise performances of front-end amplifiers. In this paper, a new method for the voltage noise measurement is proposed, which allows, at least in principle, the complete elimination of the noise introduced by the amplifiers used for the(More)
—In this paper, after discussing some important limitations of the most common circuital configuration that is used for the realization of very low-noise transimpedance amplifiers, we propose and analyze a new circuit topology which allows us to obtain significant advantages as far as equivalent input current noise and bandwidth (BW) are concerned. We(More)
—In this paper, the potential of Silicon-Germanium (SiGe) technology for VLSI logic applications is investigated from a circuit perspective for the first time. The study is based on experimental measurements on 45-nm SiGe pMOSFETs with a high-/metal gate stack, as well as on 45-nm Si pMOSFETs with identical gate stack for comparison. In the reference SiGe(More)
Recently we have proposed several voltage noise measurement methods that allow, at least in principle, the complete elimination of the noise introduced by the measurement amplifier. The most severe drawback of these methods is that they require a multistep measurement procedure. Since environmental conditions may change in the different measurement steps,(More)