Federica Cappelluti

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This paper presents an accurate and flexible approach to the self-consistent electrothermal modeling of III-N-based HEMTs, combining a temperature-dependent electrical compact model with a novel behavioral nonlinear dynamic thermal model, suitable for circuit-level simulations. The behavioral thermal model is extracted, according to a Wiener-like approach,(More)
A physics-based model for PiN power diodes is developed and implemented as a SPICE subcircuit. The model is based on a distributed equivalent circuit representation of the PiN base region, which is obtained by solving the ambipolar diffusion equation with the finite difference method. The model is validated against experimental characterization that is(More)
The paper presents a comprehensive analysis of the large-signal stability of symmetric multibranch power amplifiers through the application of Floquet theory implemented directly in the frequency domain. The generality of the approach allows to gain a global assessment of the amplifier stability, without resorting to specific approaches based on layout(More)
We propose a rigorous finite-element-method (FEM) model for traveling-wave structures on doped semiconductor substrates based on a full-wave electromagnetic model coupled to a drift-diffusion description of carrier transport. The coupled model allows to describe field-carrier interactions in distributed structures, where strong low-frequency dispersion due(More)
We present a novel analysis of thermal instabilities and oscillations in multifinger heterojunction bipolar transistors (HBTs), based on a harmonic-balance computer-aided-design (CAD)-oriented approach to the dynamic stability assessment. The stability analysis is carried out in time-periodic dynamic conditions by calculating the Floquet multipliers of the(More)
The paper presents the results of the application of physics-based mixed-mode simulations to the analysis and optimization of the reverse recovery for Si-based fast recovery diodes (FREDs) using Platinum (Pt) lifetime killing. The trap model parameters are extracted from Deep Level Transient Spectroscopy (DLTS) characterization. The model is validated(More)
This paper presents a rigorous numerical approach to the stability analysis of multi-device power amplifiers. As well known, amplifiers exploiting symmetrical power dividing and combining networks exhibit both even-mode and odd-mode instabilities, the latter being impossible to detect in a input-output port small-signal stability assessment. In the present(More)
TiO(2) nanotube (NT) arrays with different lengths were fabricated by anodic oxidation of Ti foil and free-standing NT membranes were detached by the metal substrate and bonded on the fluorine-doped tin oxide surface implementing an easy procedure. Morphology of the as-grown material and of the prepared photoanode was investigated by means of electron(More)
A SPICE model of power PiN diodes is presented, based on the solution of the ambipolar diffusion equation through the finite difference method. The model is validated against experimental characterizations of commercial devices for on-state and reverse-recovery operation. Simulation examples of practical switched-mode power supplies (SMPS) are provided, in(More)