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This paper describes a low voltage low noise amplifier (LNA), designed using 0.35¿m SiGe BiCMOS process, targeting a center frequency of 5.8GHz with a voltage supply 1.2V. A power gain of 12.1dB at 5.8GHz has been achieved with a low power consumption of 3.8mW, including all biasing circuitry. The overall noise figure of the LNA is 3dB with both input and(More)
—Many architectures of transistor only simulated inductors (TOSI) have been proposed until now in literature. Exhibiting tuning possibilities, low chip area and offering integration facility, they constitute promising architectures to replace passive inductors in RF circuits. An improved CMOS active inductor topology is proposed in this paper. With a novel(More)
AlGaN/GaN HEMTs are on the way to lead the RF-power amplification field according to their outstanding performances. However, due to its relative youth, reliability studies in several types of operating conditions allow to understand mechanisms peculiar to this technology and responsible for the wearing out of devices. This paper reports the reliability(More)
This paper presents measurement of AlGaN/GaN HEMT temperature with two techniques. Coupling of infrared thermography and electrical characterization of drain current shows good agreement of both techniques. They are complementary and may allow spatial cartography of HEMT channel temperature. By applying these methods to life test and coupling it to physical(More)
Reliability knowledge of AlGaN/GaN High Electron Mobility Transistors (HEMT) remains a major challenge to provide safe power devices. In order to understand degradation mechanisms related to this technology, accurate life tests must be performed. In this paper, saturated-pulsed-RF stress tests at enhanced drain bias voltage are performed on an AlGaN/GaN(More)
The paper presents an improved tuning method implemented for a differential active inductor based RF bandpass filter. Derived from a previous designed transistor-only second order filter topology, independent frequency and quality factor tuning are demonstrated in 0.18 µm CMOS technology. The circuit has been basically designed for a maximum frequency of(More)
A 2.4GHz front-end system design for wide spectrum WLAN applications is presented in a 0.35 μm SiGe BiCMOS Technology. This transceiver front-end contains a receive (Rx) chain with a two-stage cascode low noise amplifier (LNA) and an active down-conversion Rx mixer, and a transmit (Tx) chain composed of a Gilbert-Cell core up-conversion Tx mixer and(More)
This paper describes a monolithic tunable active time delay with variable gain, designed using monolithic-microwave integrated-circuit (MMIC) technology, targeting in 3.5-4.5 GHz range with a low power consumption of 9.4 mW. It is impossible to realize such great delays with ideal transmission line in MMIC, because of the length required for the line. In(More)
Fully differential voltage-controlled oscillator (VCO) design with a low phase noise and extra linear VCO gain (Kvco) for 5-GHz wireless applications in 0.35-mum SiGe (Silicon Germanium) BiCMOS technology is discussed in this paper. The phase noise level is -120.976 dBc/Hz at 1 MHz offset at an oscillation frequency of 5.4 GHz. The Kvco changes from 214(More)