Farid Moshgelani

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In this paper, FinFET devices are analyzed with emphasis on sub-threshold leakage current control. This is achieved through proper biasing of the back gate, and through the use of asymmetric work functions for the four terminal FinFET devices. We are also examining different configurations of multiplexers and XOR gates using transistors of symmetric and(More)
In this paper we are examining different configurations and circuit topologies for adder circuits using both symmetric and asymmetric work-function FinFET transistors. Based on extensive characterization data, for the carry generation of a mirror full adder using symmetric devices, both leakage current and delay are decreased by 25% and 50% respectively(More)
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