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Highly-efficient GaN-based light-emitting diode (LED) wafers have been grown on La 0.3 Sr 1.7 AlTaO6 (LSAT) substrates by radio-frequency molecular beam epitaxy (RF-MBE) with optimized growth conditions. The structural properties, surface morphologies, and optoelectronic properties of as-prepared GaN-based LED wafers on LSAT substrates have been(More)
The effects of the growth parameters on the uniformity and the aspect ratio of InN nanowires grown on Si(111) substrates have been studied systematically, and a modified quasi-equilibrium model is proposed. The growth temperature is of great importance for both the nucleation of the nanowires and the migration of In and N atoms, thus affecting the(More)
The growth process of InAs quantum dots grown on GaAs (511)A substrates has been studied by atomic force microscopy. According to the atomic force microscopy studies for quantum dots grown with varying InAs coverage, a noncoherent nucleation of quantum dots is observed. Moreover, due to the long migration length of In atoms, the Ostwald ripening process is(More)
On page 4277, G. Li and co-workers aim to promote III-V compound semiconductors and devices for a broad range of applications with various technologies. The growth process of InAs quantum dots on GaAs (511)A substrates is systematically studied. By carefully controlling the competition between growth thermal-dynamics and kinetics, InAs quantum dots with(More)
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