Fan-Chi Hou

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The implementation of generation±recombination (g±r) noise in a partial di€erential equation based device simu-lator is presented. Derived from the Shockley±Read±Hall model, the strength of each local g±r noise source is calculated based on the carrier transition rates between the conduction band, valence band, and trap states. The perturbations of these(More)
—Carrier trapping via tunneling into the gate oxide was implemented into a partial differential equation-based semiconductor device simulator to analyze the-like noise in silicon MOSFETs. Local noise sources are calculated using the carrier tunneling rates between trap centers in the oxide and those at the interface. Using the Green's transfer function(More)
—Generation–recombination noise associated with bulk defect levels in silicon is modeled in a partial differential equation-based device simulator to study the maximum allowable defect density that guarantees generation-recombination (g–r) noise-free operation in the presence of hot-carrier effects and space-charge injection.
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