Faiza Afroz Faria

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Nonalloyed ohmic contacts regrown by molecular beam epitaxy were made on InAlN/AlN/GaN/SiC high-electronmobility transistors (HEMTs). Transmission-line-method measurements were carried out from 4 K to 350 K. Although the total contact resistance is dominated by the metal/n-GaN resistance (∼0.16 Ω · mm), the resistance induced by the interface between the(More)
(Received 13 April 2012; accepted 9 July 2012; published online 20 July 2012) Ti/Al/Ni/Au ohmic contacts were formed on heavily doped nþ metal-polar GaN samples with various Si doping concentrations grown by molecular beam epitaxy. The contact resistivity (RC) and sheet resistance (Rsh) as a function of corresponding GaN free carrier concentration (n) were(More)
We report 30-nm-gate-length InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs) with a record current gain cutoff frequency (fT ) of 370 GHz. The HEMT without back barrier exhibits an extrinsic transconductance (gm.ext) of 650 mS/mm and an on/off current ratio of 10 owing to the incorporation of dielectric-free passivation and regrown ohmic(More)
A technology similar to silicon-on-insulator is highly desirable for III–V electronics to support scaling for future generations. This letter reports the first realization of strained GaN quantum-well transistors embedded in unstrained AlN as the insulator. The molecular beam epitaxy (MBE)-grown heterostructure consisting of an ultrathin GaN channel buried(More)
Nonalloyed ohmic contacts regrown by molecular beam epitaxy were made on InAlN/AlN/GaN/SiC high-electronmobility transistors (HEMTs). Transmission-line-method measurements were carried out from 4 K to 350 K. Although the total contact resistance is dominated by the metal/n-GaN resistance (∼0.16 Ω · mm), the resistance induced by the interface between the(More)
In this study, we assess image analysis techniques as automatic identifiers of three Anastrepha species of quarantine importance, Anastrepha fraterculus (Wiedemann), Anastrepha obliqua (Macquart), and Anastrepha sororcula Zucchi, based on wing and aculeus images. The right wing and aculeus of 100 individuals of each species were mounted on microscope(More)
Low temperature growth of AlN from 470 1C down to room temperature has been studied by RF-plasma assisted molecular beam epitaxy (PAMBE). Partially amorphous AlN was achieved at growth temperatures below 250 1C. We demonstrate the application of the low temperature (LT-) AlN as an in-situ surface passivation technique for III-nitride based high electron(More)
The effects of fringing capacitances on the high-frequency performance of T-gate GaN high-electron mobility transistors (HEMTs) are investigated. Delay time components have been analyzed for gate-recessed InAlN/GaN HEMTs with a total gate length of 40 nm and fT / fmax of 225/250 GHz. It is found that the gate extrinsic capacitance contributes significantly(More)
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