Faisal Saleh Al Mashary

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A detailed study of interface states in interfacial misfit (IMF) grown GaSb on GaAs substrates is presented. Two types of structures, namely, uncompensated and Te compensated, are investigated using current-voltage, capacitance-frequency, conductance-frequency, and deep level transient spectroscopy techniques. Our studies reveal that incorporation of Te at(More)
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