Fabrizio Ramundo

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Static leakage currents represent a major issue in nano-scale CMOS. In digital VLSI circuits, the most relevant contributions to the overall leakage current are: sub-threshold conduction, gate current and band-to-band-tunneling (BTBT) current, which flows from drain (source) to the substrate through the reverse biased diffusion junctions [1]. While the last(More)
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