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Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline(More)
The distributions of the size of islands and of the capture zones are discussed comparatively, both experimentally and numerically, for the case of a sudden nucleation process with and without coarsening. The experiments were performed by growing InAs islands on GaAs(001) and the coarsening was altered by varying the temperature. In the two-dimensional(More)
A combination of far-infrared and Raman spectroscopy is employed to investigate vibrational modes and the carrier behavior in amorphous and crystalline ordered GeTe-Sb2Te3 alloys (GST) epitaxially grown on Si(111). The infrared active GST mode is not observed in the Raman spectra and vice versa, indication of the fact that inversion symmetry is preserved in(More)
The thermal and electrical properties of phase change materials, mainly GeSbTe alloys, in the crystalline state strongly depend on their phase and on the associated degree of order. The switching of Ge atoms in superlattice structures with trigonal phase has been recently proposed to develop memories with reduced switching energy, in which two differently(More)
In this Article, Stefania Privitera and Emanuele Rimini are incorrectly listed as being affiliated with This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the(More)
High-Resolution Electron-Energy-Loss Spectroscopy (HREELS) has been applied to investigate the anisotropy of the GaAs(001)-c(4 £ 4) and b2(2 £ 4) reconstructions. Measurements have been performed on high-quality samples grown in situ by Molecular Beam Epitaxy. The loss intensity is different in the directions parallel and perpendicular to dimers,(More)
Here we show a new effect due to the arsenic flux in the molecular beam epitaxy growth of InAs quantum dots on GaAs(001) at temperatures higher than 500 °C and high As/In flux ratio. We show that, by changing and tuning the direction of the As flux on a rippled substrate, a selective growth can be obtained where the dots form only on some appropriately(More)
The present work displays a route to design strain gradients at the interface between substrate and van der Waals bonded materials. The latter are expected to grow decoupled from the substrates and fully relaxed and thus, by definition, incompatible with conventional strain engineering. By the usage of passivated vicinal surfaces we are able to insert(More)
The evolution of InAs and In(0.85)Mn(0.15)As quantum dots grown at 270 °C is studied as a function of coverage. We show that, in contrast to what occurs at high temperature, the two-dimensional to three-dimensional transition is not abrupt but rather slow. This is due to the finding that part of the deposited material also contributes to the wetting layer(More)