• Publications
  • Influence
Neural-network-based approach to resist modeling and OPC
  • F. Zach
  • Engineering
  • SPIE Advanced Lithography
  • 28 May 2004
Resist modeling based on aerial image parameters is an attractive approach to account for resist effects in optical proximity correction. The goal of this work is to introduce neural networks as aExpand
  • 7
  • 2
Subresolution assist feature implementation for high-performance logic gate-level lithography
This paper investigates the implementation of sub-resolution assist features (SRAFs) in high performance logic designs for the poly-gate conductor level. We will discuss the concepts used for SRAFExpand
  • 16
  • 1
Growth and characterization of ZnSe grown by organometallic vapor phase epitaxy using diisopropyl selenide and diethyl zinc
Abstract Diisopropyl selenide (DIPSe) and diethyl zinc have been used successfully to grow ZnSe epitaxial layers on GaAs by organometallic vapor phase epitaxy (OMVPE). The epilayers have beenExpand
  • 10
  • 1
Is model-based optical proximity correction ready for manufacturing? Study on 0.12- and 0.175-μm DRAM technology
Two full-chip OPC approaches, a traditional rule-based approach and a more recent model-based approach are compared on DRAM applications using both ArF and KrF lithography, with off-axis illuminationExpand
  • 1
  • 1
New insights into the compensation mechanism of Fe‐doped InP
We have investigated iron‐doped semi‐insulating and conducting InP using a variety of characterization techniques. The occupation of the iron acceptor level was determined from measurements of theExpand
  • 33
Process dependencies of optical proximity corrections
Optical Proximity Correction has emerged as an industry standard technique to reproduce the desired shapes on wafers as pattern dimensions are approaching the optical resolution limits. HoweverExpand
  • 8
Electrical properties of the hydrogen defect in InP and the microscopic structure of the 2316 cm−1 hydrogen related line
We have studied the microscopic structure of a hydrogen related defect by measuringits vibrational IR absorption at 2315.6 cm−1 in bulk InP crystals doped with deuterium. In contrast to the spectrumExpand
  • 23
Sequential PPC and process-window-aware mask layout synthesis
We present a full-chip implementation of model-based process and proximity compensation. Etch corrections are applied according to a two-dimensional model. Lithography is compensated by optimizing aExpand
  • 6
Metrology for stepper illumination pupil profile
A technique for measuring the profile of the illumination in the pupil of a lithography projector is presented. The technique is based on exposing pinhole patterns on a wafer at different dose andExpand
  • 3
Aberration analysis using reconstructed aerial images of isolated contacts on attenuated phase-shift masks
A technique for the evaluation of scanner lens aberration is described and analyzed. The method is based on the reconstruction of aerial image distribution using a double exposure technique: A firstExpand
  • 6
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