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Photoluminescence investigation of the carrier recombination processes in ZnO quantum dots and nanocrystals
The carrier recombination processes in ZnO quantum dots ($\ensuremath{\sim}4\phantom{\rule{0.3em}{0ex}}\mathrm{nm}$ in diameter), ZnO nanocrystals
Spin-Valve Effect in NiFe/MoS2/NiFe Junctions.
TMDs are identified as a promising spacer compound in magnetic tunnel junctions and may open a new avenue for the TMDs-based spintronic applications.
High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy
Reproducible Sb-doped p-type ZnO films were grown on n-Si (100) by electron-cyclotron-resonance-assisted molecular-beam epitaxy. The existence of Sb in ZnO:Sb films was confirmed by low-temperature
Manipulating surface states in topological insulator nanoribbons.
Experimental evidence for the modulation of surface states by using a gate voltage to control quantum oscillations in Bi(2)Te(3) nanoribbons and the first observation of h/2e periodic oscillations are reported, suggesting the presence of time-reversed paths with the same relative zero phase at the interference point.
Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te
It is demonstrated that Bi2Se2Te can serve as a suitable topological insulator candidate for achieving intrinsic quantum transport of surface Dirac fermions and weak anti-localization and quantum oscillations originated from surface states in Bi2 Se2Te crystals.
Zeeman splitting and dynamical mass generation in Dirac semimetal ZrTe5
This work reports high-magnetic-field transport measurements of the Dirac semimetal candidate ZrTe5, and interprets the abrupt changes in the magnetoresistance, indicating field-induced phase transitions, which bears resemblance to the dynamical mass generation of nucleons in high-energy physics.
ReS2‐Based Field‐Effect Transistors and Photodetectors
Atomically thin 2D layered transition metal dichalcogenides (TMDs) have been extensively studied in recent years because of their appealing electrical and optical properties. Here, the fabrication of
Tunable Ambipolar Polarization-Sensitive Photodetectors Based on High-Anisotropy ReSe2 Nanosheets.
The appealing physical properties demonstrated in this study clearly identify ReSe2 as a highly anisotropic 2D material for exotic electronic and optoelectronic applications.
Very large magnetoresistance in graphene nanoribbons
The experimental observation of a significant enhancement in the conductance of a graphene nanoribbon field-effect transistor in a perpendicular magnetic field is reported, with a negative magnetoresistance of nearly 100% observed at low temperatures, with over 50% remaining at room temperature.
Controllable Schottky Barriers between MoS2 and Permalloy
Permalloy (Py) contacts to both multilayer and monolayer MoS2 are investigated and a good tunability of the Schottky barrier height is achieved, which may pave the way to realize spin transport and spin injection inMoS2.