• Publications
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Surface emitting semiconductor lasers
A description is given of the research progress in developing a vertical-cavity surface-emitting (SE) injection laser based on GaAlAs/GaAs and GaInAsP/InP systems. Ultimate laser characteristics,Expand
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Frequency chirping in external modulators
A general formula is given that expresses frequency chirping in some types of external intensity modulators, such as the loss modulator, directional-coupler-type modulator, Mach-ZehnderExpand
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Recent Advances of VCSEL Photonics
A vertical-cavity surface emitting laser (VCSEL) was invented 30 years ago. A lot of unique features can be expected, such as low-power consumption, wafer-level testing, small packaging capability,Expand
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Lasing Characteristics of Low-Threshold GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
We report on the lasing characteristics of low-threshold long-wavelength GaInNAs double quantum well (DQW) lasers grown by metalorganic chemical vapor deposition (MOCVD). We have achieved a thresholdExpand
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Polarization control of vertical-cavity surface emitting lasers using a birefringent metal/dielectric polarizer loaded on top distributed Bragg reflector
A novel polarization control method using a birefringent metal/dielectric (semiconductor) polarizer has been proposed for the purpose of controlling the polarization state of vertical-cavityExpand
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Analysis of dynamic spectral width of dynamic-single-mode (DSM) lasers and related transmission bandwidth of single-mode fibers
A simple formula of the dynamic spectral width of a directly modulated dynamic-single-mode (DSM) laser, and the related maximum transmission bandwidth of a single-mode fiber limited by chromaticExpand
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Continuous wave operation of 1.26 [micro sign]m GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition
Electrically pumped near 1.3 /spl mu/m GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition are demonstrated for the first time. The threshold currentExpand
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Recent advances in VCSEL photonics
  • F. Koyama
  • Computer Science, Materials Science
  • 16th Opto-Electronics and Communications…
  • 1 December 2006
TLDR
We have seen a lot of unique features for VCSELs, such as low power consumption, wafer-level testing, small packaging capability and so on. Expand
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Room-temperature continuous wave lasing characteristics of a GaAs vertical cavity surface-emitting laser
Room‐temperature continuous wave (cw) operation of a GaAs vertical microcavity surface‐emitting laser has been achieved. An ultrashort cavity device with a cavity length of ∼5.5 μm was grown byExpand
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Record low-threshold index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure
An index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure has been proposed and fabricated. A record threshold current of 70 µA was achieved withExpand
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