The Mott Metal-Insulator Transition: Models and Methods
- F. Gebhard
- Physics
- 18 April 1997
Metal-Insulator Transitions.- Hubbard Model.- Approximate Methods.- One-Dimensional Hubbard Models.- Hubbard Model in Infinite Dimensions.- Further Models with Hubbard Interaction.- Conclusions.
Resonant electron tunneling through defects in GaAs tunnel diodes
- K. Jandieri, S. Baranovskii, A. Bett
- Physics, Engineering
- 10 November 2008
Current-voltage characteristics of GaAs tunnel diodes are studied experimentally and theoretically. In theoretical calculations contributions of three different transport mechanisms are considered:…
MULTIBAND GUTZWILLER WAVE FUNCTIONS FOR GENERAL ON-SITE INTERACTIONS
- Jorg Bunemann, W. Weber, F. Gebhard
- Physics
- 19 December 1997
We introduce Gutzwiller wave functions for multi-band models with general on-site Coulomb interactions. As these wave functions employ correlators for the exact atomic eigenstates they are exact both…
Tomonaga-Luttinger parameters for doped Mott insulators
- S. Ejima, F. Gebhard, S. Nishimoto
- Physics
- 1 May 2005
The Tomonaga-Luttinger parameter Kρ determines the critical behavior in quasi–one-dimensional correlated electron systems, e.g., the exponent α for the density of states near the Fermi energy. We use…
Dynamic properties of the one-dimensional Bose-Hubbard model
- S. Ejima, H. Fehske, F. Gebhard
- Physics
- 1 February 2011
We use the density-matrix renormalization group method to investigate ground-state and dynamic properties of the one-dimensional Bose-Hubbard model, the effective model of ultracold bosonic atoms in…
Renormalization of bulk magnetic electron states at high binding energies.
- A. Hofmann, X. Cui, R. Claessen
- PhysicsPhysical Review Letters
- 15 April 2009
The quasiparticle dynamics of electrons in a magnetically ordered state is investigated by high-resolution angle-resolved photoemission of Ni(110) at 10 K, with significant deviations exist in the 300 meV range, as identified on magnetic bulk bands for the first time.
Effective temperature for hopping transport in a Gaussian density of states
- F. Jansson, S. D. Baranovskii, F. Gebhard, R. Österbacka
- Physics, Materials Science
- 28 May 2008
For hopping transport in disordered materials, the mobility of charge carriers is strongly dependent on the temperature and the electric field. Our numerical study shows that both the energy…
Excitons in one-dimensional Mott insulators
- F. Essler, F. Gebhard, E. University, UK., Philipps-Universitat Marburg, H Germany
- Physics
- 20 March 2001
We employ dynamical density-matrix renormalization-group (DDMRG) and field-theory methods to determine the frequency-dependent optical conductivity in one-dimensional extended, half-filled Hubbard…
Non-Onsager mechanism of long-wave photogeneration in amorphous selenium at high electric fields
- A. Reznik, K. Jandieri, F. Gebhard, S. Baranovskii
- Physics
- 26 March 2012
The quantum efficiency of the free-carrier-photogeneration in amorphous selenium avalanche blocking structures is studied experimentally in a wide range of wavelengths (380–600 nm) at high electric…
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