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Raman spectroscopy is employed to characterize thin diamond and diamond-like carbon films deposited by hot filament chemical vapour deposition (HFCVD). A method is proposed and experimentally… (More)
The key feature of the source-gated transistor is the source barrier. Here we report the analysis of source-gated transistors in amorphous silicon having Schottky source barriers. It is shown that… (More)
Compared with the field-effect transistor, the source-gated transistor has a much lower saturation voltage and higher output impedance. These features are investigated using computer modeling for… (More)
A small-signal equivalent circuit is derived for source-gated transistors. For Schottky source barriers, a particularly simple expression is derived for fT which is confirmed using 2-D modeling.
In general, the range of applications for large-area electronics or macroelectronics is limited by the quality of the semiconductor used to make the electronic devices and circuits. Here, we address… (More)
Source-gated transistors (SGTs) have been made in thin layers of polysilicon formed by excimer laser crystallization of amorphous silicon. It is shown that the main features of the SGT, namely a low… (More)
The most important advantage of a source-gated transistor compared with a field-effect transistor (FET) is its low saturation voltage and high output impedance. Here we model a reverse biased gated… (More)
In conventional organic field-effect transistors (OFETs), the low mobility of carriers in the organic semiconductor layers leads to low device speed , which seriously limits the applicability of the… (More)
Diamond-like carbon thin films (DLC) with increased thermal stability were prepared by filtered pulsed laser deposition (F-PLD). The influence of different substrate temperatures on the growth and… (More)
Diamond thin films have been deposited using a modified hot filament CVD method involving a dual-plasma reactor arrangement. This new design allows ignition of d.c. plasma above and/or below the hot… (More)