F. V. Kyrychenko

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Y. D. Jho,1,3 F. V. Kyrychenko,1 J. Kono,2 X. Wei,3 S. A. Crooker,4 G. D. Sanders,1 D. H. Reitze,1 C. J. Stanton,1 and G. S. Solomon5 1Department of Physics, University of Florida, Gainesville, Florida 32611, USA 2Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, USA 3National High Magnetic Field Laboratory, Florida(More)
A theory of transport in spin and charge disordered media is developed, with a particular emphasis on dilute magnetic semiconductors. The approach is based on the equation of motion for the current-current response function and considers both spin and charge disorder and electron-electron interaction on an equal footing. The formalism is applied to the(More)
In III-V dilute magnetic semiconductors such as Ga1−xMnxAs, the impurity positions tend to be correlated, which can drastically affect the electronic transport properties of these materials. Within the memory function formalism we have derived a general expression for the current relaxation kernel in spin and charge disordered media and have calculated spin(More)
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