F. Tumisto

  • Citations Per Year
Learn More
Minimization of dopant diffusion during electrical activation is a crucial issue in developing sub-50 nm silicon technology. Excimer laser annealing (ELA) in the melting regime is capable of meeting the requirements on shallow junctions in terms of depth, doping concentration and abruptness. However, in order to be successfully employed it has to be(More)
  • 1