F.R.-L. Lin

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A novel hot carrier mechanism "band-to-band tunneling hole induced bipolar hot electron (BBHBHE)" is, for the first time, observed in the new P-channel MOSFET with an embedded NPN bipolar transistor at the source side. Operating in the band-to-band tunneling region (i.e. positive gate voltage), the new P-cell generates 100/spl times/ gate current larger(More)
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