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The volume degradation features of very thin tunnel oxide layers will be deeply analyzed and the validity of the following issues will be demonstrated quantitatively: i) only negative charge builds-up in the bulk of the insulator layer, ii) for a given oxide thickness and gate stress polarity breakdown occurs as soon as the negative trapped bulk oxide(More)
Non Volatile Memory cells must retain the data (i.e. the charge stored in the floating gate) during the device lifetime, typically at least 10 years. In this work we study the impact of different passivation layers on the data retention of single polysilicon EEPROM cells, processed with an advanced 0.7 /spl mu/m process technology. Three passivation layers(More)
The reliability properties of RTP nitrided oxides in N<inf>2</inf>O ambient are investigated and compared with those of reference oxides after Fowler-Nordheim stress. The high quality of the oxinitride layers emphasizes the suitability of this material as an alternative insulator for the fabrication of high performance ULSI devices. Besides, a new method to(More)
This paper will present a very compact EEPROM cell for high density applications, featuring split voltage programming. The information is stored in a self-aligned floating-gate transistor with thin (8nm) tunnel oxide. Bit selection is performed by a low-voltage transitor. Long endurance (more than 10<sup>6</sup> cycles) is achieved and the asymmetric window(More)
The effects of undesired series resistance in thin oxide capacitors are studied. Thin dielectric reliability is usually evaluated by means of accelerated tests (ramped or constant voltage or current stress). It is shown that the breakdown electric field can be highly overestimated due to the series resistance associated with the test structure: the larger(More)
The use of an Exponentially Ramped Current Stress as an accelerated method for wafer-level tunnel oxide reliability evaluation has already been proposed, [1,2]. This paper illustrates the wide range of dielectric parameters which can be obtained from this measurement, including Charge to Breakdown, I-V and Fowler Nordheim Characteristics, Breakdown Field(More)
The impact of the furnace nitridation temperature on the quality of the Si/SiO<inf>2</inf> system will be investigated. The analysis will be conducted in terms of bulk oxide trapping properties after Fowler-Nordheim injection, breakdown parameters and hot carrier endurance data. Finally, it will be demonstrated that a lower furnace nitridation temperature(More)
INTRODUCTION The electrical quality and reliability of thin SÍO2 films can be significantly im¬ proved by nitridation. Globally, an optimum exists for a very small concentration of N at the SÍ/SÍO2 interface [1], which makes rapid thermal processing a particu¬ larly attractive technique. In spite of the large number of empirical studies, little is known(More)
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