F. P. Widdershoven

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The detection principle, process integration and system architecture of a novel 90-nm CMOS-based mixed-signal capacitive biosensor with 256 × 256 densely packed nano-electrodes are presented. The sensor operates at modulation frequencies up to 200 MHz, and has on-chip temperature sensors, A/D converters and digital I/O. Brownian motion of nanobeads(More)
Platforms that offer massively parallel, label-free biosensing can, in principle, be created by combining all-electrical detection with low-cost integrated circuits. Examples include field-effect transistor arrays, which are used for mapping neuronal signals and sequencing DNA. Despite these successes, however, bioelectronics has so far failed to deliver a(More)
Abstract In this paper the I-V conduction mechanism for gate injection (-Vg), Stress-Induced Leakage Current(SILC) characteristics and time-to-breakdown(tbd) of PMOS capacitors with p poly-Si and poly-SiGe gate material on 5.6,4.8 and 3.1 nm oxide thickness are studied. A model based on Minority Carrier Tunneling(MCT) from the gate is proposed for the IV(More)
In this paper the I-V conduction mechanism for gate injection (-V/sub g/), Stress-Induced Leakage Current (SILC) characteristics and time-to-breakdown (t/sub bd/) of PMOS capacitors with p/sup +/-poly-Si and poly-SiGe gate material on 5.6, 4.8 and 3.1 nm oxide thickness are studied. A model based on Minority Carrier Tunneling (MCT) from the gate is proposed(More)
The gate bias polarity dependence of stress-induced leakage current (SILC) of PMOS capacitors with a p/sup +/ polycrystalline silicon (poly-Si) and polycrystalline Silicon-Germanium (poly-Si/sub 0.7/Ge/sub 0.3/) gate on 5.6-nm thick gate oxides has been investigated. It is shown that the SILC characteristics are highly asymmetric with gate bias polarity.(More)
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