F. N. Cubaynes

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This paper investigates the use of RPN-based oxynitride gate dielectrics for 90 nm Low Power (LP) CMOS applications. Several recipes have been developed to optimise the gate dielectric for targeted EOT, high mobility and improved EOT uniformity. Compared to conventional furnace oxynitride, significant gate leakage reduction has been found in devices with(More)
[in the text referred to as (C…)] C1 A. Mathewson et al. Design for reliability. Investigating the flat band voltage shift induced by rapid thermal annealing. Development and characterisation of an enzyme based amperometric sensor for the detection of lactate. test structures for metal and metal-oxide thin film characterisation. Efficient oxide-confined red(More)
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