F. Mitterbauer

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We present a comprehensive simulation framework for transport modeling in nano-scaled devices based on the solution of the subband Boltzmann transport equation (BTE). The BTE is solved in phase space using a k·p-based electronic structure model and includes all relevant scattering processes. The BTE solver is combined with a conventional(More)
A physically-grounded modeling, simulation, and parameter-extraction framework that targets design and engineering of ultra-scaled devices and next-generation channel materials. The framework consists of a fast and accurate Schrdinger-Poisson solver/mobility extractor coupled to a device simulator. It brings physical modeling of semiconductor channels to(More)
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