F. Jomard

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Boron delta-doping of diamond has appeared as a promising viable approach for the fabrication of high performance RF power transistors taking advantage of diamond properties. Here structures based on p-/p+/p- multilayers were synthesised on (100) HPHT Ib substrates using MPCVD. An original gas injector system was developed enabling to significantly improve(More)
by performing electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and the decay kinetics on photoexcitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. Large enhancements in the magnitude of the photoconductance and charge carrier lifetime are(More)
The phenomenon of resistive switching (RS), which was initially linked to non-volatile resistive memory applications, has recently also been associated with the concept of memristors, whose adjustable multilevel resistance characteristics open up unforeseen perspectives in cognitive computing. Herein, we demonstrate that the resistance states of Li(x)CoO2(More)
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