The phenomenon of resistive switching (RS), which was initially linked to non-volatile resistive memory applications, has recently also been associated with the concept of memristors, whose adjustable multilevel resistance characteristics open up unforeseen perspectives in cognitive computing. Herein, we demonstrate that the resistance states of Li(x)CoO2… (More)
Boron delta-doping of diamond has appeared as a promising viable approach for the fabrication of high performance RF power transistors taking advantage of diamond properties. Here structures based on p-/p+/p- multilayers were synthesised on (100) HPHT Ib substrates using MPCVD. An original gas injector system was developed enabling to significantly improve… (More)
We report innovative highly reflective DBR structures based on the novel material BAIN. An experimental BAIN/AIN DBRs demonstrated a reflectivity of 60% and 82% at wavelengths of 282 nm and 311nm respectively.