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A simple circuit using a tunnel diode, a storage capacitor and a source follower is proposed as a Programmable Floating Gate Voltage Reference. The charge loss mechanisms through the different devices are studied as function of time both for as fabricated and programmed state. For t <10 ks, charge loss from the Floating Gate is dominated by electron loss(More)
A study on the programming yield of one time programmable (OTP) device based on anti-fuse gate oxide breakdown on p-type and n-type substrates is presented. Charge injection into anti-fuse gate oxide from the substrate during OTP programming can alter device characteristics, which impact the OTP programming yield. Experiments showed higher programming yield(More)
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