F. G. Ruiz

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—The trend toward continuous integration of the nanometer scale and the rise of nonconventional device concepts such as multigate transistors present important challenges for the semiconductor community. Simulation tools have to be adapted to this new scenario where classical approaches are not sufficiently accurate, and quantum effects have to be taken(More)
We report on the calculation of quasi-bound states in ultra thin film Surrounding-Gate (SG) MOSFETs and their impact on the direct tunneling current through the SiO 2 layer. For typical device parameters, the gate leakage in inversion is dominated by this tunneling component. However, if the eigenvalues of the closed system are used to calculate quasi-bound(More)
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