F. G. Ruiz

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—The trend toward continuous integration of the nanometer scale and the rise of nonconventional device concepts such as multigate transistors present important challenges for the semiconductor community. Simulation tools have to be adapted to this new scenario where classical approaches are not sufficiently accurate, and quantum effects have to be taken(More)
The influence of the back-gate bias on the threshold voltage and on the electron mobility of silicon trigate devices over ultra-thin-box is studied. The analysis confirms the possibility of achieving body factors higher than γ=0.1 as long as the channel width over height ratio is increased as much as possible. Also, the strong impact of the back-gate(More)
The downscaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) is a major priority nowadays due to its important advantages. As the size of such devices keeps shrinking, it gets harder to control the shape of the device and variations from the ideal square shape occurs very often. In this work we study the effects of such shape variability(More)
We report on the calculation of quasi-bound states in ultra thin film Surrounding-Gate (SG) MOSFETs and their impact on the direct tunneling current through the SiO 2 layer. For typical device parameters, the gate leakage in inversion is dominated by this tunneling component. However, if the eigenvalues of the closed system are used to calculate quasi-bound(More)
A variety of techniques can be employed to increase the drive current in CMOS transistors. In this paper, we study the effects of using different wafer orientations and strain methods in surrounding gate transistors. Specifically , we focus on Quantum Electron Density and mobility. A significant modification of both magnitudes is to be expected, due to the(More)
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