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We have studied the electron-transport properties of strained-Si on relaxed Si12xGex channel MOSFETs using a Monte Carlo simulator adapted to account for this new heterostructure. The low-longitudinal field as well as the steadyand nonsteady-state high-longitudinal field transport regimes have been described in depth to better understand the basic transport(More)
A physical model for trap-assisted inelastic tunnel current through potential barriers in semiconductor structures has been developed. The model is based on the theory of multiphonon transitions between detrapped and trapped states and the only fitting parameters are those of the traps ~energy level and concentration! and the Huang–Rhys factor. Therefore,(More)
A model to study the effect of the roughness at the poly-Si/SiO2 interface in silicon inversion layers on the electron mobility is obtained. Screening of the resulting perturbation potential by the channel carriers is taken into account, considering Green’s functions for metal–oxide–semiconductor geometry, i.e., taking into account the finite thickness of(More)
The effect of surface roughness scattering on electron transport properties in extremely thin silicon-on-insulator inversion layers is carefully analyzed. It is shown that if the silicon layer is thin enough ~thinner than 10 nm! the presence of the buried interface plays a very important role, both by modifying the surface roughness scattering rate due to(More)
A simple analytical expression to account for electron-velocity overshoot effects on the performance of very short-channel MOSFET’s has been obtained. This new model can be easily included in circuit simulators of systems with a huge number of components. The influence of temperature and low-field mobility on the increase of MOSFET transconductance produced(More)
Inversion-layer mobility has been investigated in extremely thin silicon-on-insulator metal–oxide– semiconductor field-effect transistors with a silicon film thickness as low as 5 nm. The Poisson and Schr!dinger equations have been self-consistently solved to take into account inversion layer quantization. To evaluate the electron mobility, the Boltzmann(More)
The dependence of the electron mobility on the longitudinal electric field in MOSFETs has been studied in detail. To do so, a Monte Carlo simulation of the electron dynamics in the channel, coupled with a solution of the two-dimensional Poisson equation including inversion-layer quantization and drift-diffusion equations, has been developed. A simplified(More)
A new experimental method for determining the dependence of the electron mobility on the longitudinal-electric field has been developed. The development, validation, and explanation of this new method has been carefully carried out. We have applied this procedure to standard submicron MOSFET’s and after having obtained the mobility dependence on both the(More)
Electron mobility in extremely thin-film siliconon-insulator (SOI) MOSFET’s has been simulated. A quantum mechanical calculation is implemented to evaluate the spatial and energy distribution of the electrons. Once the electron distribution is known, the effect of a drift electric field parallel to the Si–SiO2 interfaces is considered. The Boltzmann(More)