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We have studied the electron-transport properties of strained-Si on relaxed Si 1Ϫx Ge x channel MOSFETs using a Monte Carlo simulator adapted to account for this new heterostructure. The low-longitudinal field as well as the steady-and nonsteady-state high-longitudinal field transport regimes have been described in depth to better understand the basic… (More)

- M. V. Fischetti, F. Gámiz
- 2002

The recently reported large enhancement of the electron mobility in strained-Si inversion layers at large carrier concentrations cannot be easily explained: The strong carrier confinement in inversion layers removes the sixfold degeneracy of the conduction-band minima, much as tensile in-plane strain does, so that the effect of strain should become… (More)

- Juan A. López-Villanueva, Pedro Cartujo-Cassinello, Francisco Gámiz, Alberto J. Palma
- 2000

—The role of the inversion-layer centroid in a double-gate metal-oxide-semiconductor field-effect-transistor (DGMOSFET) has been investigated. The expression obtained for the inversion charge is similar to that found in conventional MOSFET's, with the inversion-charge centroid playing an identical role. The quantitative value of this magnitude has been… (More)

— A simple analytical expression to account for electron-velocity overshoot effects on the performance of very short-channel MOSFET's has been obtained. This new model can be easily included in circuit simulators of systems with a huge number of components. The influence of temperature and low-field mobility on the increase of MOSFET transconductance… (More)

The dependence of the electron mobility on the longitudinal electric field in MOSFETs has been studied in detail. To do so, a Monte Carlo simulation of the electron dynamics in the channel, coupled with a solution of the two-dimensional Poisson equation including inversion-layer quantization and drift-diffusion equations, has been developed. A simplified… (More)

- J. B. Roldán, F. Gámiz, J. A. Lopez-Villanueva, P. Cartujo, J. E. Carceller
- 1998

— We have developed a new analytical ultra-short channel MOSFET model for circuit simulation including velocity overshoot effects. We have been able to reproduce experimental I-V curves and conductances of MOSFET's down to 0.07 m channel lengths both at low and room temperatures.

- F. Gámiz, J. B. Roldán, J. E. Carceller, P. Cartujo
- 2003

An improved theory for remote-charge-scattering-limited mobility in silicon inversion layers is developed. The model takes into account the effects of image charges, screening, inversion layer quantization, the contribution of different subbands, oxide thickness, the actual distribution of charged centers inside the structure, the actual distribution of… (More)

- F. Gámiz, M. V. Fischetti
- 2003

The effect of screening of remote Coulomb scattering ͑RCS͒ by free electrons in the polycrystalline silicon ͑polysilicon͒ gate of a metal–oxide–semiconductor transistor has been analyzed. We have completed a previous model of RCS by adding the effects of the screening by electrons in the gate assuming a Thomas–Fermi dielectric function to take into account… (More)

The effect of surface roughness scattering on electron transport properties in extremely thin silicon-on-insulator inversion layers is carefully analyzed. It is shown that if the silicon layer is thin enough ͑thinner than 10 nm͒ the presence of the buried interface plays a very important role, both by modifying the surface roughness scattering rate due to… (More)

— Electron mobility in extremely thin-film silicon-on-insulator (SOI) MOSFET's has been simulated. A quantum mechanical calculation is implemented to evaluate the spatial and energy distribution of the electrons. Once the electron distribution is known, the effect of a drift electric field parallel to the Si–SiO 2 interfaces is considered. The Boltzmann… (More)