F.F. Villa

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  • F.F. Villa
  • IEEE Transactions on Electron Devices
  • 1986
This paper presents two new power bipolar transistor structures With greatly increased forward Second breakdown values without saturation voltage degradation. These structures, labeled<tex>S</tex>1 and<tex>S</tex>2, were obtained with slight modification of the output stages of an IC power amplifier and without complicating the standard IC process. The(More)
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