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In this paper, the MTJs with high magnetoresistance and low resistance were fabricated with the layer structures of Ta/Al (5 nm/20 nm)/Ni/sub 79/Fe/sub 21//Ir/sub 22/Mn/sub 78/(10 nm)/Co/sub 75/Fe/sub 25/(4 nm)/Al(0.8 nm)-oxide/Co/sub 75/Fe/sub 25/(4 nm)/Ni/sub 79/Fe/sub 21/(20 nm)/Ta(5 nm) by using lithography method and Al as conduction electrode.
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