F. Cristiano

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B implanted emitters are investigated in the back junction cell configuration and their material properties are tested in double side implanted Si wafers. B has been implanted at 5 keV at various dose conditions varying from 1 10 up to 3 10 at./cm and activated at 10008C for 10min. N-type 8 8 cm mono-crystalline cells are fabricated and measured. Both fill(More)
SiGe heterojunction bipolar transistors (HBTs) have been fabricated using selective epitaxy for the Si collector, followed in the same growth step by nonselective epitaxy for the p SiGe base and n-Si emitter cap. DC electrical characteristics are compared with cross-section TEM images to identify the mechanisms and origins of leakage currents associated(More)
The synthesis and doping of Si/Sil-,Ge,/Si heterostructures by ion implantation is being investigated as an alternative to epitaxial deposition as a means of forming heterostructures for device applications. Test structures with graded Si/Sil-,Ge, interfaces have been formed in ntype Si w>afers by the implantation of 7OkeV or 14OkeV Ge+ ions and ‘doses up(More)
formation during nonmelt laser annealing J. A. Sharp, A. J. Smith, R. P. Webb, K. J. Kirkby, N. E. B. Cowern, D. Giubertoni, S. Gennaro, M. Bersani, M. A. Foad, P. F. Fazzini, and F. Cristiano Surrey Ion Beam Centre, Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford GU2 7XH, United Kingdom School of(More)
Advanced-logic device technology for the 65 nm node and beyond requires highly-activated, shallow, and abrupt dopant profiles (Int. Technol. Roadmap for Semicond., 2003). The combination of ion implantation and an advanced annealing technology is expected to provide solutions for these requirements. In contrast to spike annealing, a diffusion-less but(More)
In this paper, we study the effect of excimer laser annealing on silicon and specifically the oxygen impurities induced versus laser energy density. We show that oxygen penetration from the native oxide occurs during laser annealing, which increases with increasing laser energy. At higher laser energies, oxygen precipitation occurs well below the surface,(More)
  • V. Uhnevionak, A. Burenkov, +6 authors P. Pichler
  • 2015
The effect of bulk potential engineering on the transport properties in the channel of SiC MOSFETs has been studied. For this purpose, n-channel SiC MOSFETs have been manufactured with different background doping concentrations and characterized electrically at room temperature by current-voltage as well as by Hall-effect measurements. To interpret the(More)
  • V. Uhnevionak, A. Burenkov, +5 authors P. Pichler
  • 2014
For the characterization of n-channel 4H-SiC MOSFETs, current-voltage and Hall-effect measurements were carried out at room temperature. To interpret the Hall-effect measurements, the Hall factor for the electron transport in the channel of SiC MOSFETs was evaluated, for the first time. The method of the Hall factor calculation is based on the(More)