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We report, for the first time, the observation of resonant tunneling induced negative differential characteristics in the light-current (L-I) and light-voltage (L-V) curves of a single-quantum-well semiconductor laser. Broad-stripe lasers have exhibited CW threshold current density of 50 A/cm/sup 2/ at 77 K, with a sharp decrease in output light power at 68(More)
Experimental results on tensile-strained Al/sub 0.3/Ga/sub 0.66/As-GaAs/sub 0.78/P/sub 0.22/ separate-confinement-heterostructure single-quantum-well (SCH-SQW) laser diodes are reported. Threshold current density as low as 260 A/cm/sup 2/ for broad-stripe lasers with a cavity length of 1500 /spl mu/m has been observed. Broad-stripe devices have operated cw(More)
In this work, we experimentally study the temperature characteristics of tensile-strained GaAsP-AlGaAs single-quantum-well-heterostructure (SQWH) laser diodes. Specifically, we systematically examine the dependence of the characteristic temperature (T/sub O/) on the quantum well composition in broad-area stripe lasers with identical quantum well widths (115(More)
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