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Abstrac: In this paper, we investigate the influence of process parameters like HALO and Source/Drain (S/D) Implantation on threshold voltage in 45nm PMOS device. The settings of process parameters were determined by using Taguchi experimental design method. The level of importance of the process parameters on threshold voltage was determined by using(More)
In this paper, we investigate the effect of four process parameters namely HALO implantation, compensation implantations, SiO2 thickness and silicide annealing time on threshold voltage (V TH) in complementary metal oxide semiconductor (CMOS) technology. The setting of process parameters were determined by Taguchi method in experimental design. The(More)
In this study, Taguchi method was used to optimize the influence of process parameter variations on threshold voltage (V TH) in 45 nm n-channel metal oxide semiconductor (NMOS) device. The orthogonal array, the signal-to-noise ratio, and analysis of variance were employed to study the performance characteristics of a device. In this paper, eleven process(More)
The characteristics of high performance 45nm pMOS devices based on International Technology Roadmap for Semiconductor (ITRS) have been studied using ATHENA and ATLAS's simulator. There are four factors were varied for 3 levels to perform 9 experiments. The factors are halo implantation, Source/Drain (S/D) implantation, oxide growth temperature and silicide(More)
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