Eytan Barouch

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This paper explores the application of phenomenological models that take into account photoresist processing effects when simulating the predicted shapes of small structures created in state-of-the-art microelectronic fabrication. This work extends some of the one-dimensional (1-D) model development reported in recent years to two-dimensional (2D)(More)
An early historical overview is first presented here on the use of simulation in optical microlithography, along with a description of the general physical models. This paper then turns to more recent development work in microlithography simulation, which has followed several very different tracts. Three of the most important areas are discussed here. The(More)
The degree to which critical performance parameters are stable against small variations in process parameters is called process latitude. Advanced computer models of UV microlithography are used to study the impact of the notching phenomenon (exposure enhancement near steps in the exposure plane) on process latitude. It is shown that notching effects give(More)
Dill's model equations for the exposure bleaching of positive photoresists have been solved exactly in a closed form when the bleaching characteristics are nonlinear. As an application, the simultaneous bleaching of a positive photoresist and that of a polysilane contrast-enhancing film (CEF) is solved to determine the photoactive compound (PAC)(More)
A comprehensive three-dimensional simulation model for non-planar substrate lithography is presented. Matching substrate as well as standing wave effects are examined. The projection printing is simulated using Hopkins' results and the exposure model is solved using spectral element discretizations of the nonlinear wave equation coupled with the rate(More)
A model was developed to simulate the behavior of near-surface-imaged resist processes, with the emphasis on modeling of resist processes for 193 nm. Silylation, bilayer, and additive resist processes can all be simulated using this model. For the silylarion process, the model was found to be in excellent agreement with experimentally observed silylated(More)
Dynamics of a Local Perturbation in the XY Mode!. I-Approach to Equilibrium D. B. Abraham§, E. Barouch∗§, G. Gallavotti and A. Martin-Löf Abstract: The magnetization and spin correlation functions of theX−Y model are analysed exactly when the system is subjected to a local perturbation of the magnetic field in the z-direction. When such a perturbation is(More)