Evan R. Glaser

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The annealing behavior of defects observed in electron paramagnetic resonance EPR and photoluminescence PL is discussed. We consider the divacancy the P6/P7 EPR centers and a previously unreported EPR center that we suggest is a VC-VSi-VC trivacancy and their relationship with each other and with the UD1–3 series of PL lines near 1 eV. We observe that the(More)
We present X-ray photoelectron spectroscopy, van der Pauw Hall mobilities, low-temperature far-infrared magneto transmission (FIR-MT), and atomic force microscopy (AFM) results from graphene films produced by radiative heating in an ultrahigh vacuum (UHV) chamber or produced by radio frequency (RF) furnace annealing in a high vacuum chemical vapor(More)
Invited Paper Metal–organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) are the principal techniques for the growth and n-type (Si) and p-type (Mg) doping of III-nitride thin films on sapphire and silicon carbide substrates as well as previously grown GaN films. Lateral and pendeoepitaxy via MOVPE reduce significantly the dislocation(More)
Forty-eight subjects with repaired palatal clefts were divided into three major groups on the basis of speech symptoms and were examined for velopharyngeal valving integrity by means of the R-D nasal manometer, pressure-flow techniques, the Hunter oral manometer, and videofluoroscopy. Videofluoroscopy appeared to provide data that most nearly agreed with(More)
Melanization due to the inactivation of the homogentisate-1,2-dioxygenase gene (hmgA) has been demonstrated to increase stress resistance, persistence, and virulence in some bacterial species but such pigmented mutants have not been observed in pathogenic members of the Vibrio Harveyi clade. In this study, we used Vibrio campbellii ATCC BAA-1116 as model(More)
Solid source molecular beam epitaxy has been used to grow random alloy quaternary InAlAsSb and ternary InGaSb alloys with a 6.2 Å lattice constant for use in electronic devices such as p-n junctions and heterojunction bipolar transistors ͑HBTs͒. Several p-n hetrojunctions composed of p-type InGaSb and one of several different n-type InAlAsSb alloys have(More)
The growth of monoclinic Ga 2 O 3 nanowires, nano-ribbons and nano-sheets has been investigated. Results indicate that high quality single crystal nanowires can be grown at 900°C using an Au catalyst, while single crystal nano-ribbons and nano-sheets require no metal catalyst for growth. Since bulk Ga 2 O 3 is a promising material for high temperature gas(More)
Aerosol deposition (AD) is a thick-film deposition process that can produce layers up to several hundred micrometers thick with densities greater than 95% of the bulk. The primary advantage of AD is that the deposition takes place entirely at ambient temperature; thereby enabling film growth in material systems with disparate melting temperatures. This(More)
K5Sb4 and K3Sb7 Zintl ion precursors react with Pd(PPh3)4 in ethylenediamine/toluene/PBu4+ solutions to give crystals of Sb@Pd12@Sb20n-/PBu4+ salts, where n = 3, 4. The clusters are structurally identical in the two charge states, with nearly perfect Ih point symmetry, and can be viewed as an Sb@Pd12 icosahedron centered inside of an Sb20 dodecahedron. The(More)
The remarkable electronic properties of graphene strongly depend on the thickness and geometry of graphene stacks. This wide range of electronic tunability is of fundamental interest and has many applications in newly proposed devices. Using the mid-infrared, magneto-optical Kerr effect, we detect and identify over 18 interband cyclotron resonances (CR)(More)