Amorphous gallium-indium-zinc-oxide (GIZO) thin film transistors with short channels of 50 nm were successfully fabricated by e-beam lithographic patterning. The GIZO thin film transistors showed a… (More)
The composition of amorphous oxide semiconductors, which are well known for their optical transparency, can be tailored to enhance their absorption and induce photoconductivity for irradiation with… (More)
We, for the first time, have successfully fabricated amorphous Ga <sub>2</sub>O<sub>3</sub>-In<sub>2</sub>O<sub>3</sub>-ZnO thin film transistor (TFT) with excellent electrical properties and good… (More)
In this presentation, we report excellent electrical and optical characteristics of a dual gate photo thin film transistor (TFT) with bi-layer oxide channel, which was designed to provide virgin… (More)
In this letter, we investigated the effects of source/drain series resistance on amorphous gallium-indium-doped zinc-oxide (a-GIZO) thin film transistors (TFTs). A linear least square fit of a plot… (More)
High-k/metal gate (HKMG) compatible high performance Source/Drain (S/D) stress-memorization-technology (SMT) is presented. Channel stress generated by SMT can be simulated by using mask-edge… (More)
We successfully integrated the high performance oxide thin film transistors with double active layers. The active layer is composed of IZO (or ITO) and GIZO layers. The TFT with ITO/GIZO double… (More)
Ultra-definition, large-area displays with three-dimensional visual effects represent megatrend in the current/future display industry. On the hardware level, such a "dream" display requires faster… (More)
A novel method to design metal oxide thin-film transistor (TFT) devices with high performance and high photostability for next-generation flat-panel displays is reported. Here, we developed bilayer… (More)
Diverse signals generated from the sensing elements embedded in flexible electronic skins (e-skins) are typically interfered by strain energy generated through processes such as touching, bending,… (More)