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We tried to establish models that predict systemic recurrence in breast cancer by selecting marker clones with DNA copy number alterations (CNAs) using an array comparative genomic hybridization (CGH). Array CGH containing 4,044 human bacterial artificial chromosome clones was used to assess CNAs in 62 primary breast cancer tissues from 31 patients with(More)
Until now, acrylates have been the monomers of choice for use for step and flash imprint lithography ͑SFIL͒ etch barrier formulations, in part because of the commercial availability of silicon-containing acrylates ͑necessary for etch resistance͒, together with their low viscosities and capability for rapid photopolymerization. However, despite many(More)
Unsuppressed carrier scattering from the underlying substrate in a layered two-dimensional material system is extensively observed, which degrades significantly the performance of devices. Beyond the material itself, understanding the intrinsic interfacial and surficial properties is an important issue for the analysis of a high-κ/MoS2 heterostructure.(More)
We report a highly stable p-type doping for single walled carbon nanotubes using an electrochemical method. The Raman spectroscopy showed the upshift of the G-band when the applied potential increased. Furthermore, the carbon core level shifted as much as 0.14 eV in binding energy of XPS measurement, which is an evidence of p-type doping with a Fermi level(More)
The effects of template surface composition on fluorinated surfactant segregation were investigated for imprint lithography with photopolymerizable vinyl ether formulations. Heptadecafluoro-1,1,2,2-tetrahydrodecyl vinyloxy-methyloxy dimethylsilane, containing a vinyl ether group, was employed as the surfactant, and blanket templates were pressed onto the(More)
Nanofloating gate memory ͑NFGM͒ devices using In 2 O 3 nanoparticles as charge storages embedded in polyimide gate insulator were fabricated. Self-assembled In 2 O 3 nanoparticles were formed inside the polyimide matrix as a result of chemical reactions between indium ions and polymer precursors. The average diameter and the particle density were 7 nm and 6(More)
The electrical characteristics of SiC nanocrystal nonvolatile-memory devices with variable oxide and crested tunnel barriers consisting of a SiO2/Si3N4/SiO2 (ONO) and a Si3N4/SiO2/Si3N4 (NON) layer, respectively, were investigated. The equivalent oxide thickness of the ONO and NON tunnel barriers were about 5.6 nm and 5.2 nm, respectively. When the +/- 13 V(More)
A nano-floating gate capacitor with WSi2 nanocrystals embedded in SiO2 dielectrics was fabricated. The WSi2 nanocrystals were created from ultrathin WSi2 film during rapid thermal annealing process and their average size and density were about 2.5 nm and 3.59 x 10(12) cm(-2), respectively. The flat-band voltage shift due to the carrier charging effect of(More)
Hybrid memory devices with polyimide and SnO2 nanocrystals on a flexible polyethersulphone substrate have shown a memristor behavior from current-voltage (I-V) measurements. The resistive-switching effects with a current bistability appeared during cycling voltage sweeping within the range of +/- 4 V. This I-V switching effect might have originated from a(More)