Eun Kyu Kim

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Nanofloating gate memory ͑NFGM͒ devices using In 2 O 3 nanoparticles as charge storages embedded in polyimide gate insulator were fabricated. Self-assembled In 2 O 3 nanoparticles were formed inside the polyimide matrix as a result of chemical reactions between indium ions and polymer precursors. The average diameter and the particle density were 7 nm and 6(More)
We fabricated multi-layered graphene/MoS2 heterostructured devices by positioning mechanically exfoliated bulk graphite and single-crystalline 2H-MoS2 onto Au metal pads on a SiO2/Si substrate via a contamination-free dry transfer technique. We also studied the electrical transport properties of Au/MoS2 junction devices for systematic comparison. A previous(More)
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