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We discuss an approach for the modelling of random dopant fluctuations based on the impedance field method that has been recently integrated into DESSIS. The method is easy to use and orders of magnitudes more efficient than the statistical method.
In this paper, quantum transport simulations for AlGaAs/InGaAs HEMT devices based on the density gradient model are presented. It is shows that size quantization effects have a pronounced influence on the electrical characteristics.
—A physics-based gate current model has been developed based on nonequilibrium electron energy distributions obtained from the spherical harmonic expansion of the Boltz-mann equation. The model accounts for band structure effects, relevant microscopic scattering mechanisms, and electron injections caused by tunneling and thermionic emission processes with… (More)