- Full text PDF available (1)
Ground level upsets have been observed in computer systems containing large amounts of random access memory (RAM). Atmospheric neutrons are most likely the major cause of the upsets based on measured data using the Weapons Neutron Research (WNR) neutron beam.
This paper reports 14 MeV neutron induced single-event effects results for a variety of microelectronic devices that include an ADC, operational amplifiers, optocoupler, flash memory, PowerPC microprocessor, SRAM, and SDRAM. Data were collected to evaluate these devices for possible use in NASA spacecraft.
We describe an IEC technical standard for atmospheric radiation single event effects at aircraft altitudes. Guidance is provided on the aircraft radiation environment, effects on electronic components, system assessment, single event rate calculation and compliance.
A cross comparison of SEU, SEFI and SEL responses in >30 devices (SRAMs µprocessors and FPGAs) using different neutron/proton beams leads to observation that SEU and SEFI cross sections from 14 MeV neutrons are within <2 compared to LANL neutron beam.
The proton telescope aboard the GOES-7 satellite continuously records the proton flux at geosynchronous orbit, and therefore provides a direct measurement of the energetic protons arriving during solar energetic particle (SEP) events. Microelectronic devices are susceptible to single event upset (SEU) caused by both energetic protons and galactic cosmic ray… (More)