Ground level upsets have been observed in computer systems containing large amounts of random access memory (RAM). Atmospheric neutrons are most likely the major cause of the upsets based on measured data using the Weapons Neutron Research (WNR) neutron beam.
This paper reports 14 MeV neutron induced single-event effects results for a variety of microelectronic devices that include an ADC, operational amplifiers, optocoupler, flash memory, PowerPC microprocessor, SRAM, and SDRAM. Data were collected to evaluate these devices for possible use in NASA spacecraft.
Technology advances in wafer processing and design, new device requirements and improved modeling necessitate the need for a careful determination of LET at and through the critical silicon region of interest during SEE testing.
A cross comparison of SEU, SEFI and SEL responses in >30 devices (SRAMs µprocessors and FPGAs) using different neutron/proton beams leads to observation that SEU and SEFI cross sections from 14 MeV neutrons are within <2 compared to LANL neutron beam.
We describe the results of single event effects testing conducted by the Boeing Radiation Effects Laboratory on a variety of devices. The data include SEU, SEL and SEFI cross sections induced by both heavy ions and protons.