Etienne Ntagwirumugara

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A monolithic integration of filters on Si or GaAs substrates is highly desirable to miniaturize the outer dimensions of the cellular phones. But, direct monolithic integration of surface acoustic wave (SAW) filters is impossible with Si, which is nonpiezoelectric, and difficult with GaAs, which is weakly piezoelectric. One alternative is the deposition of a(More)
In this paper, we present an analysis and real isation of a ladder-type SAW filter composed of six resonators on the same port. The filter will be developed on a structure with three layers of a ZnO film and aluminium (AI) electrodes on a silicon (Si) substrate with TilAu for metallization in the 925-960MHz frequency band range. Up to now, RF front-end and(More)
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