Ethan H. Cannon

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As semiconductor devices decrease in size, soft errors are becoming a major issue that must be addressed at all stages of product definition. Even before prototype silicon chips are available for measuring, modeling must be able to predict soft-error rates with reasonable accuracy. As the technology matures, circuit test sites are produced and(More)
The design of the clocked storage elements (CSEs) and associated local clocking circuitry is a critical consideration for modern microprocessor projects[1], and the POWER7 chip[2], designed in a 45nm silicon-on-insulator (SOI) technology, was no exception. The digital logic contained over 2M CSEs, and the design of these elements had a major impact not only(More)
As the CMOS IC industry continues to follow an aggressive scaling roadmap, device sizes and voltage margins are rapidly shrinking. These factors, along with the construction of larger and more complex systems, increasing clock frequencies, and other complications lead to a growing sensitivity to radiation events. Of particular concern is the sensitivity of(More)
We study a resistively shunted semiconductor superlattice subject to a highfrequency electric field. Using a balance equation approach that incorporates the influence of the electric circuit, we determine numerically a range of amplitude and frequency of the ac field for which a dc bias and current are generated spontaneously and show that this region is(More)
Kirill N. Alekseev, Gennady P. Berman, David K. Campbell Ethan H. Cannon, and Matthew C. Cargo aCenter for Nonlinear Studies and Theoretical Division, Los Alamos National Laboratory Los Alamos, New Mexico 87545, U.S.A. bKirensky Institute of Physics, 660036, Krasnoyarsk, Russia cDepartment of Physics, University of Illinois at Urbana-Champaign, 1110 West(More)
We study electron transport through a semiconductor superlattice subject to an electric field parallel to and a magnetic field perpendicular to the growth axis. Using a single miniband, semiclassical balance equation model with both elastic and inelastic scattering, we find that (1) the current-voltage characteristic becomes multistable in a large magnetic(More)