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In this work, we report an extensive experimental and theoretical investigation of the voltage and temperature dependence of dielectric breakdown for both high-κ/SiO2 dual-layer and SiO2 single-layer… (More)
Understanding the reliability implications for silicon-on-insulator (SOI) is crucial for its use in ULSI technology. The fabrication process of SOI material and the device operation, due to the… (More)
The possible application of the successive breakdown reliability methodology to ultrathin oxides of about 1 nm is examined. It is shown that these ultrathin oxides show both soft and hard breakdown.… (More)
V. Ku, R. Amos, A. Steegen, C. Cabral, Jr.*, V. Narayanan*, P. Jamison*, P. Nguyen, Y. Li, M. Gribelyuk, Y. Wang, J. Cai*, A. Callegari*, F. McFeely*, F. Jamin, K. Wong, E. Wu, A. Chou, D. Boyd*, H.… (More)