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— Characteristics of coplanar transmission lines on multilayer substrates expressed in analytic formulas have been obtained using conformal mapping. The accuracy of these formulas has been verified experimentally on a variety of copla-nar transmission lines using differential electro-optic (DEOS) sampling. For coplanar waveguides, the theory differs from(More)
The resonance behavior of metal transmission gratings and its impact on the response of metal-semiconductor-metal ͑MSM͒ photodetectors have been studied experimentally and theoretically. The metal gratings, with finger spacings in the subwavelength region of the visible light, were fabricated using e-beam lithography and lift-off. Strong resonances have(More)
— A solid-state device that can be used to detect the polarization direction of linear polarized light is proposed. The device consists of six transmission gratings with periods in the subwavelength region of the incident light and six pho-todetectors integrated separately underneath each grating. A variable, defined through the photocurrent ratios of the(More)
The group velocities in coplanar strip transmission lines on Si and Si/SiO 2 /Si substrates were compared experimentally and theoretically. To ensure the experimental accuracy, a differential electro-optic sampling system with a delay-time resolution of 30 fs and a spatial resolution of 1 ␮m has been developed. Compared with the group velocity on a Si(More)
The medical physics profession is undergoing significant changes. Starting in 2014, candidates registering for certification exams by the American Board of Radiology must have completed a CAMPEP-accredited residency. This requirement, along with tightened state regulations, uncertainty in future reimbursement, and a stronger emphasis on board certification,(More)
A silicon metal–semiconductor–metal photodetector with high-efficiency and high-speed in the infrared is reported. The high performance is achieved by using a Si-on-insulator substrate with a patterned nanometer-scale scattering reflector buried underneath a 170-nm-thick Si active layer. This scattering reflector causes light to be trapped inside the thin(More)
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